IEC 63068-3:2020 PDF

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

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IEC 63068-3:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 51
Дата публикации:: 13 июля 2020 г.
Издание:: IEC IS 63068 edition 1 version 1
ICS:: 31.080.99

Язык документа:

ruen

Срок поставки:9 раб. дн. (перевод)

Цена:765 €

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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Технические детали

Технический комитет: TC 47 - Semiconductor devices
SKU: IEC 63068-3:2020

Abstract

Overview

IEC 63068-3:2020 is an international standard developed by the International Electrotechnical Commission (IEC) that defines a non-destructive test method for detecting defects in silicon carbide (SiC) homoepitaxial wafers using photoluminescence (PL). This standard focuses on commercially available 4H-SiC epitaxial wafers, which are critical materials for power semiconductor devices. With the rising adoption of SiC for next-generation power electronics-due to its superior breakdown electric field, high thermal conductivity, and robust high-temperature performance-ensuring wafer quality is vital for device yield and reliability.

The IEC 63068-3:2020 standard provides detailed guidelines on the photoluminescence method, including equipment requirements, wafer positioning, image capture, processing, analysis, and evaluation. This facilitates consistent detection and categorization of common defects such as basal plane dislocations, stacking faults, propagated stacking faults, stacking fault complexes, and polytype inclusions.

Key Topics

Photoluminescence Test Method
- Fundamentals of PL imaging for defect characterization in 4H-SiC wafers
- Equipment specifications and calibration requirements
- Wafer focusing and positioning techniques to optimize image quality
- Image capturing protocols to ensure reproducibility and accuracy
- Image processing, analysis, and evaluation criteria to identify defect types and quantify defect dimensions
Defect Recognition and Categorization
- Identification of basal plane dislocations (BPDs), stacking faults, and complex fault structures
- Use of PL emission spectra and imaging to differentiate defect types
- Guidelines for documentation and reporting of defect analysis results
Standardization Benefits
- Ensures comparability of defect detection results across different laboratories and manufacturers
- Supports quality control and yield improvement in SiC power device manufacturing
- Enables non-destructive testing that preserves wafer integrity for further processing

Applications

Power Semiconductor Manufacturing The standard is applicable in the quality control processes of epitaxial wafer suppliers and device manufacturers, improving defect detection in SiC wafers destined for power electronics applications such as electric vehicles, industrial motor drives, renewable energy inverters, and high-frequency power supplies.
Research and Development Laboratories focused on SiC material science and device development can adopt this standardized PL method to evaluate wafer quality and study defect dynamics, accelerating innovations in SiC-based power semiconductors.
Failure Analysis and Reliability Testing The recommended photoluminescence techniques can assist in identifying wafer defects that impact long-term device reliability, supporting root cause investigations in production lines and during reliability qualification tests.

Related Standards

IEC 63068 Series
- Part 1: Classification of defects in SiC homoepitaxial wafers
- Part 2: Terminology and general inspection guidelines for SiC wafers
Other Semiconductor Wafer Inspection Standards
- Standards covering non-destructive inspection methods using photoluminescence, electroluminescence, and other optical techniques in semiconductor materials
IEC Technical Committee 47 (Semiconductor Devices)
- The governing body for standardization in semiconductor device materials and test methods

By following IEC 63068-3:2020, semiconductor industry stakeholders can leverage a robust, internationally recognized photoluminescence test method to effectively detect and classify defects in 4H-SiC epitaxial wafers. This contributes to enhancing the performance, yield, and reliability of SiC-based power electronic devices.

Overview

Key Topics

Photoluminescence Test Method
- Fundamentals of PL imaging for defect characterization in 4H-SiC wafers
- Equipment specifications and calibration requirements
- Wafer focusing and positioning techniques to optimize image quality
- Image capturing protocols to ensure reproducibility and accuracy
- Image processing, analysis, and evaluation criteria to identify defect types and quantify defect dimensions
Defect Recognition and Categorization
- Identification of basal plane dislocations (BPDs), stacking faults, and complex fault structures
- Use of PL emission spectra and imaging to differentiate defect types
- Guidelines for documentation and reporting of defect analysis results
Standardization Benefits
- Ensures comparability of defect detection results across different laboratories and manufacturers
- Supports quality control and yield improvement in SiC power device manufacturing
- Enables non-destructive testing that preserves wafer integrity for further processing

Applications

Power Semiconductor Manufacturing The standard is applicable in the quality control processes of epitaxial wafer suppliers and device manufacturers, improving defect detection in SiC wafers destined for power electronics applications such as electric vehicles, industrial motor drives, renewable energy inverters, and high-frequency power supplies.
Research and Development Laboratories focused on SiC material science and device development can adopt this standardized PL method to evaluate wafer quality and study defect dynamics, accelerating innovations in SiC-based power semiconductors.
Failure Analysis and Reliability Testing The recommended photoluminescence techniques can assist in identifying wafer defects that impact long-term device reliability, supporting root cause investigations in production lines and during reliability qualification tests.

Related Standards

IEC 63068 Series
- Part 1: Classification of defects in SiC homoepitaxial wafers
- Part 2: Terminology and general inspection guidelines for SiC wafers
Other Semiconductor Wafer Inspection Standards
- Standards covering non-destructive inspection methods using photoluminescence, electroluminescence, and other optical techniques in semiconductor materials
IEC Technical Committee 47 (Semiconductor Devices)
- The governing body for standardization in semiconductor device materials and test methods

IEC 63068-3:2020 PDF

Технические детали

Abstract

Overview

Key Topics

Applications

Related Standards

Похожие стандарты

Abstract

Overview

Key Topics

Applications

Related Standards

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